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| NTGD3133P Power MOSFET -20 V, -2.5 A, P-Channel, TSOP-6 Dual Features * * * * * * * * * Reduced Gate Charge for Fast Switching -2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility This is a Pb-Free Device http://onsemi.com V(BR)DSS -20 V RDS(on) MAX 145 mW @ -4.5 V 200 mW @ -2.5 V ID MAX -2.5 A Applications Li-Ion Battery Charging Load Switch / Power Switching DC to DC Conversion Portable Devices like PDA's, Cellular Phones, and Hard Drives S1 G1 G2 S2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, TSTG IS TL ID TA = 25C TA = 85C TA = 25C PD TA = 25C 1.3 -1.6 -1.2 0.56 7.0 -55 to 150 -0.8 260 W A C A C S2 G2 2 3 5 4 S1 D2 G1 1 6 D1 A Symbol VDSS VGS ID Value -20 12 -2.3 -1.6 -2.5 1.1 W 1 TSOP6 CASE 318G SC MG G Unit V V A D1 P-CHANNEL MOSFET D2 P-CHANNEL MOSFET MARKING DIAGRAM SC = Specific Device Code 1 M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN CONNECTION Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size. (Top View) ORDERING INFORMATION Device NTGD3133PT1G Package TSOP6 (Pb-Free) Shipping 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 July, 2006 - Rev. 0 Publication Order Number: NTGD3133P/D NTGD3133P THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t 5 s (Note 3) Junction-to-Ambient - Steady State Min Pad (Note 4) Symbol RqJA RqJA RqJA Max 115 95 225 Unit C/W 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS TJ = 25C TJ = 85C VGS = 0 V ID = -250 mA -20 - - - - - 14.4 - - - - - -1.0 -10 100 nA V mV/C mA Symbol Test Conditions Min Typ Max Unit VGS = 0 V, VDS = -16 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 12 V VGS(TH) RDS(on) VGS = VDS ID = -250 mA -0.6 - - - -0.9 95 150 4.0 -1.4 145 200 - V mW VGS = -4.5 V, ID = -1.9 A VGS = -2.5 V, ID = -1.6 A Forward Transconductance gFS VDS = -5.0 V, ID = -2.5 A S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, dISD / dt = 100 A/ms, IS = -1.0 A VGS = 0 V, TJ = 25C IS = -0.8 A - - - - - -0.8 7.4 4.8 2.6 2.4 -1.2 - - - - nC V ns td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -10 V, ID = -1.0 A, RG = 6.0 W - - - - 6.7 12.7 13.2 11 - - - - ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDS = -10 V, ID = -2.2 A VGS = 0 V, VDS = -10 V, f = 1.0 MHz - - - - - - - 390 75 37 3.7 0.7 1.1 1.2 - - - 5.5 - - - nC pF 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTGD3133P 10 10 TJ = 25C 4.5 V 3.5 V ID, DRAIN CURRENT (A) 8 ID, DRAIN CURRENT (A) 8 4.0 V 6 2.8 V 4 2.6 V 2.4 V 2.2 V VGS = 2.0 V 0 3.0 V 6 4 TC = 25C 2 2 TC = 125C 0 TC = -55C 2 3 4 5 0 1 2 3 4 0 1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.8 ID = 0.8 A 0.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.8 Figure 2. Transfer Characteristics 0.6 VGS = 2.5 V VGS = 3.0 V VGS = 3.5 V 0.4 0.4 0.2 0.2 VGS = 4.5 V 0 0 2 4 6 8 10 ID, DRAIN CURRENT (A) 0 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = 2.2 A VGS = 4.5 V C, CAPACITANCE (pF) 400 600 Figure 4. On-Resistance versus Drain Current and Gate Voltage 1.4 TJ = 25C VGS = 0 V CISS 1.2 1 200 COSS 0 CRSS 0 4 8 12 16 20 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTGD3133P 5 VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 2.2 A TJ = 25C 4 t, TIME (ns) 100 VDS = 15 V ID = 30 A VGS = 4.5 V td(off) tr 3 10 tf td(on) 2 1 0 0 1 2 3 4 QG, TOTAL GATE CHARGE (nC) 1 1 10 RG, GATE RESISTANCE (W) 100 Figure 7. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 10 VGS = 0 V IS, SOURCE CURRENT (A) ID, DRAIN CURRENT (A) 10 Figure 8. Resistive Switching Time Variation versus Gate Resistance VGS = 4.5 V Single Pulse TC = 25C 1 100 ms 1 ms 1 TJ = 150C TJ = 25C 0.1 10 ms 0.1 RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 10 dc 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current Figure 10. Maximum Rated Forward Biased Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.01 0.1 t, TIME (s) 1 10 100 0.01 0.0001 Figure 11. Thermal Response http://onsemi.com 4 NTGD3133P PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S D 6 5 1 2 4 3 HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTGD3133P/D |
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